Vol. 3, No. 10, 2008

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Zishun Liu & Somsak Swaddiwudhipong & Qingxiang Pei

Vol. 3 (2008), No. 10, 1847-1856
Abstract

The paper reviews recent research and developments on simulated indentation tests at micron and nanometer levels. For indentation at the maximum depth of several microns or hundreds of nanometer, classical continuum plasticity framework incorporating Taylor dislocation model via strain gradient plasticity embedded in the constitutive equation may be adopted to take care of the size effect. As higher-order stress components and higher-order continuity requirements can be made redundant, only C0 finite elements incorporating strain gradient plasticity have to be formulated. This results in the significant ease and convenience in finite element implementation requiring minimal additional computational effort and resources. Alternatively, when the indentation depth is lower at nanometer level, either a large scale molecular dynamics model or a hybrid finite element and molecular dynamics simulation has to be adopted. The article includes certain results from the former approach on nanoindentation based on combination of both Morse potential and embedded-atom model potential.

Keywords

C0 finite element, indentation test, molecular dynamics simulation, size effect, strain gradient plasticity

Authors
Zishun Liu
Institute of High Performance Computing
1 Science Park Road, # 01-01
Singapore 117528
Somsak Swaddiwudhipong
Department of Civil Engineering
National University of Singapore
E1A-07-03, 1 Engineering Drive 2
Singapore 119260
Qingxiang Pei
Institute of High Performance Computing
1 Science Park Road, # 01-01
Singapore 117528